Liquid phase electroepitaxy of III–V semiconductors
- 1 January 1995
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 146 (1-4) , 277-282
- https://doi.org/10.1016/0022-0248(94)00487-0
Abstract
No abstract availableThis publication has 68 references indexed in Scilit:
- Properties of InGaAs epitaxial layers lattice matched to InGaAs single crystal substratesJournal of Crystal Growth, 1991
- Layer thickness calculation of In1−vGavAs grown by the source-current-controlled method — Diffusion and electromigration limited growthJournal of Crystal Growth, 1989
- Growth and characterization of high quality LPEE GaAs bulk crystalsJournal of Crystal Growth, 1987
- Bulk GaAs crystal growth by liquid phase electroepitaxyJournal of Crystal Growth, 1987
- Liquid phase electroepitaxy of semiconductor compoundsProgress in Crystal Growth and Characterization, 1986
- Current controlled liquid phase epitaxial growth and characterization of InGaAsPJournal of Crystal Growth, 1984
- A New Growth Method Using Source Current Control to Supply Solute Elements-Demonstration of In1-xGaxAs CaseJapanese Journal of Applied Physics, 1984
- Phase equilibria and the growth of In1−xGaxP by Peltier-induced liquid phase epitaxyJournal of Crystal Growth, 1981
- Current-controlled growth, segregation and amphoteric behavior of Si IN GaAs from Si-doped solutionsJournal of Crystal Growth, 1977
- Electric current controlled growth and doping modulation in GaAs liquid phase epitaxyJournal of Crystal Growth, 1975