Layer thickness calculation of In1−vGavAs grown by the source-current-controlled method — Diffusion and electromigration limited growth
- 2 November 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 98 (3) , 329-340
- https://doi.org/10.1016/0022-0248(89)90148-6
Abstract
No abstract availableKeywords
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