Phase equilibria and the growth of In1−xGaxP by Peltier-induced liquid phase epitaxy
- 30 June 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 53 (3) , 530-534
- https://doi.org/10.1016/0022-0248(81)90135-4
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Low temperature phase diagram of In-Ga-P ternary systemJournal of Crystal Growth, 1980
- Phase diagrams and crystal growthJournal of Crystal Growth, 1980
- cw GaAs/GaAlAs DH lasers grown by Peltier-induced LPEJournal of Applied Physics, 1977
- Peltier-induced LPE and composition stabilization of GaAlAsApplied Physics Letters, 1975
- Liquid phase epitaxial growth and photoluminescence characterization of laser-quality (100) In1−xGaxPJournal of Crystal Growth, 1974
- Liquid phase epitaxial growth of GaxIn1−xPJournal of Electronic Materials, 1972
- Growth of In[sub (1−x)]Ga[sub x]P p-n Junctions by Liquid Phase EpitaxyJournal of the Electrochemical Society, 1971
- Calculation of the Ga-In-P Ternary Phase Diagram Using the Quasi-Chemical Equilibrium ModelJournal of the Electrochemical Society, 1970