Electric current controlled growth and doping modulation in GaAs liquid phase epitaxy
- 30 September 1975
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 30 (2) , 267-275
- https://doi.org/10.1016/0022-0248(75)90098-6
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Steady-state LPE growth of GaAsJournal of Crystal Growth, 1974
- Current-Controlled Growth and Dopant Modulation in Liquid Phase EpitaxyJournal of the Electrochemical Society, 1973
- Preparation of multilayer LPE heterostructures with crystalline solid solutions of AlxGa1−xAs: Heterostructure lasersMetallurgical Transactions, 1971
- Liquid Phase Epitaxial Growth of InAs[sub 1−x] Sb[sub x]Journal of the Electrochemical Society, 1971
- PREPARATION AND PROPERTIES OF HIGH-PURITY EPITAXIAL GaAs GROWN FROM Ga SOLUTIONApplied Physics Letters, 1967
- Thin alloy zone crystallisationJournal of Materials Science, 1967
- The motion of liquid alloy zones along a bar under the influence of an electric currentPhilosophical Magazine, 1964
- Migration of a Liquid Zone through a Solid: Part IIJournal of Applied Physics, 1963
- Migration of a Liquid Zone through a Solid: Part IJournal of Applied Physics, 1963
- Theory of the Thermoelectric Power of SemiconductorsPhysical Review B, 1954