Current-controlled growth, segregation and amphoteric behavior of Si IN GaAs from Si-doped solutions
- 31 December 1977
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 42, 309-314
- https://doi.org/10.1016/0022-0248(77)90211-1
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Current‐Induced Solution Growth of Garnet LayersJournal of the Electrochemical Society, 1977
- Polymers as Building MaterialsAnnual Review of Materials Science, 1976
- Electromigration in Current‐Controlled LPEJournal of the Electrochemical Society, 1976
- Peltier-induced LPE and composition stabilization of GaAlAsApplied Physics Letters, 1975
- Electric current controlled growth and doping modulation in GaAs liquid phase epitaxyJournal of Crystal Growth, 1975
- Current-Controlled Growth and Dopant Modulation in Liquid Phase EpitaxyJournal of the Electrochemical Society, 1973
- Dependence of Growth Properties of Silicon-Doped GaAs Epitaxial Layers upon OrientationJournal of Applied Physics, 1971
- Modulation of Dopant Segregation by Electric Currents in Czochralski-Type Crystal GrowthJournal of the Electrochemical Society, 1971
- Electrical and Optical Properties of n-Type Si-Compensated GaAs Prepared by Liquid-Phase EpitaxyJournal of Applied Physics, 1969
- EFFICIENT ELECTROLUMINESCENCE FROM GaAs DIODES AT 300°KApplied Physics Letters, 1966