Electrical Characteristics of Tisi2/n+-Polysilicon/Sio2/Si Mos Capacitors Stressed Under High Temperature Silicide Processing Conditions
- 1 January 1987
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Detailed electrical characteristics of TiSi2/n+-polysilicon/SiO2/Si MOS capacitors stressed under a variety of high temperature processing conditions is reported. These devices have ˜2000Å TiSi2 formed by a two-step thermal anneal on heavily POCl3doped polysilicon with thicknesses of 6 kÅ and 8 kÅ. These structures were capped with 8 kÅ of SiO2 and stressed in nitrogen at process temperatures in the range of 700° C to 1100° C. The electrical performance was evaluated in terms of I-V, C-V, Fowler-Nordheim tunneling, and SiO2/Si interface characteristics of MOS structures. A systematic degradation of the SiO2/Si interface was observed due to process limitations of TiSi2 at high Lemperatures.Keywords
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