Chirp Characteristics of Silicon Mach
- 4 February 2011
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Lightwave Technology
- Vol. 29 (7) , 1011-1017
- https://doi.org/10.1109/jlt.2011.2111413
Abstract
Chirp characteristics of Silicon Mach-Zehnder Interferometer (MZI) modulators with forward-biased p-i-n and reverse-biased p-n structures are investigated by performing small-signal simulation, respectively. Simulation result shows that the chirp parameter is negative and influenced by the carrier absorption effect, the amplitude, and the frequency of applied sinusoidal modulating signals. Chirp performance at 10 GHz modulation frequency can be obtained by utilizing p-n depletion mode structure. Finally, a way to further lower the absolute value of the chirp parameter is provided by operating the MZI in a push-pull configuration.Keywords
This publication has 18 references indexed in Scilit:
- Silicon optical modulatorsNature Photonics, 2010
- Low-Voltage, Compact, Depletion-Mode, Silicon Mach–Zehnder ModulatorIEEE Journal of Selected Topics in Quantum Electronics, 2010
- Performance influence of carrier absorption to the Mach-Zehnder-interference based silicon optical switchesOptics Express, 2009
- 40 Gbit/s silicon optical modulator for high-speed applicationsElectronics Letters, 2007
- Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulatorOptics Express, 2007
- High speed silicon Mach-Zehnder modulatorOptics Express, 2005
- A sub-micron depletion-type photonic modulator in Silicon On InsulatorOptics Express, 2005
- Measurement of the chirp parameter of electro-optic modulators by comparison of the phase between two sidebandsOptics Letters, 2003
- Electrooptical effects in siliconIEEE Journal of Quantum Electronics, 1987
- All-silicon active and passive guided-wave components for λ = 1.3 and 1.6 µmIEEE Journal of Quantum Electronics, 1986