Thermoelectric effects of heavily doped semiconductors at low temperatures
- 1 March 1972
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 50 (1) , 53-58
- https://doi.org/10.1002/pssb.2220500106
Abstract
Using the Green function methods, in the Feynman‐path integral formulation, applied to disordered systems and developed already in four previous papers, the thermoelectric effects at low temperatures are studied from a simplified model of heavily doped semiconductors. Two typical cases concerning the relation between the carrier and the donor concentrations are discussed.Keywords
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