Influence of silicon oxide on the morphology of HF-etched Si(111) surfaces: Thermal versus chemical oxide
- 2 December 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (23) , 2968-2970
- https://doi.org/10.1063/1.105814
Abstract
Infrared reflection-absorption measurements of the Si-H stretching vibrations of HF-etched Si(111) surfaces show that the structure of the H-passivated surfaces depends strongly on the nature of the initial silicon-oxide layer. For similar etching conditions, thermal oxides lead to much flatter surfaces than chemical oxides. A new processing sequence involving the removal of thermal oxide by buffered HF (pH=5), followed by etching in a 40% ammonium-fluoride solution, produces a remarkably homogeneous H/Si(111)-(1×1) surface, characterized by a 0.05 cm−1 broad Si-H stretch-mode.Keywords
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