15 GHz monolithic MODFET-MSM integrated photoreceiveroperatingat 1.55 µm wavelength

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Abstract
The fabrication of an extremely wide bandwidth, long wavelength integrated photoreceiver implemented withInAlAs/InGaAs/InP MODFETS and metal-semiconductor-metal photodetectors (MSM-PDs) is presented. The transimpedance amplifier is implemented with 0.25 µm gate length FETS to achieve high operational speed. The active feedback FET employed permits the amplifier's transimpedance to be varied from 5400 to 72 Ω. At a transimpedance of 350 Ω, a very flat optical to electrical frequency response with a –3 dB frequency of 10 GHz is achieved. For lower transimpedance gains, a moderately gain-peaked response is achieved, with measured –3 dB bandwidths of up to 15 GHz. To our knowledge, this is the fastest MODFET-based photoreceiver operating at a 1.55 µm wavelength, and the only MSM-MODFET photoreceiver to have a bandwidth greater than 10 GHz.