Close-contact annealing of ion-implanted GaAs and InP
- 1 June 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (11) , 927-929
- https://doi.org/10.1063/1.91376
Abstract
Both n‐ and p‐type ion‐implanted GaAs and InP have been annealed at temperatures up to 880 and 760 °C, respectively, using a ’’close‐contact’’ capless annealing technique. In this annealing process the flat, implanted surface of the semiconductor is placed in close contact with another flat surface, usually a Si3N4 encapsulated identical semiconductor. Samples annealed in such a proximity manner show no detectable sign of decomposition and exhibit state of the art electrical performance. This is the first report of successful capless annealing of InP.Keywords
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