On the semiconductor laser logarithmic gain-current density relation
- 1 May 1993
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 29 (5) , 1246-1252
- https://doi.org/10.1109/3.236138
Abstract
No abstract availableThis publication has 31 references indexed in Scilit:
- The semiconductor waveguide facet reflectivity problemIEEE Journal of Quantum Electronics, 1993
- Experimental verification of strain benefits in 1.5- mu m semiconductor lasers by carrier lifetime and gain measurementsIEEE Photonics Technology Letters, 1992
- Refractive indexes of (Al,Ga,In)As epilayers on InP for optoelectronic applicationsIEEE Photonics Technology Letters, 1992
- On the temperature sensitivity of semiconductor lasersApplied Physics Letters, 1992
- Theoretical gain in compressive and tensile strained InGaAs/InGaAsP quantum wellsApplied Physics Letters, 1991
- Band gaps and refractive indices of AlGaAsSb, GaInAsSb, and InPAsSb: Key properties for a variety of the 2–4-μm optoelectronic device applicationsJournal of Applied Physics, 1987
- The effect of intervalence band absorption on the thermal behavior of InGaAsP lasersIEEE Journal of Quantum Electronics, 1983
- Refractive index data from Ga
x
In
1−
x
As
y
P
1−
y
filmsElectronics Letters, 1981
- The Temperature Dependence of the Efficiency and Threshold Current of In1-xGaxAsyP1-yLasers Related to Intervalence Band AbsorptionJapanese Journal of Applied Physics, 1980
- Intervalence band transitions in gallium arsenideJournal of Physics and Chemistry of Solids, 1959