Refractive indexes of (Al,Ga,In)As epilayers on InP for optoelectronic applications
- 1 June 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (6) , 627-630
- https://doi.org/10.1109/68.141990
Abstract
Molecular beam epitaxy (MBE)-grown bulk and short-period superlattices of (Al,Ga,In)As epilayers lattice matched to InP were characterized by double-crystal diffractometry and low-temperature photoluminescence. A reflection spectroscopy technique was used to determine the refractive index of (Al,Ga,In)As films as a function of wavelength. The measured data were fitted to a single-oscillator dispersion model, and the model coefficients are given. The resulting expression can be used in the design of waveguides, modulators, and other optical devices.<>Keywords
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