Characterization of electron trapping defects on silicon by scanning tunneling microscopy
- 1 March 1987
- journal article
- Published by Elsevier in Surface Science
- Vol. 181 (1-2) , 333-339
- https://doi.org/10.1016/0039-6028(87)90174-9
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Capture and emission kinetics of individual Si:SiO2 interface statesApplied Physics Letters, 1986
- A simplified scanning tunneling microscope for surface science studiesJournal of Vacuum Science & Technology A, 1986
- Spatial location of electron trapping defects on silicon by scanning tunneling microscopyApplied Physics Letters, 1986
- Native defects at the Si/SiO2 interface-amorphous silicon revisitedApplications of Surface Science, 1985
- Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (?) NoisePhysical Review Letters, 1984
- 7 × 7 Reconstruction on Si(111) Resolved in Real SpacePhysical Review Letters, 1983