Spin injection from (Ga,Mn)As into InAs quantum dots
- 19 November 2002
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 66 (20) , 201301
- https://doi.org/10.1103/physrevb.66.201301
Abstract
Using a spin light emitting diode (spin-LED) we study the injection of spin-polarized holes and electrons from a (Ga,Mn)As epitaxial film into self-assembled InAs quantum dots (QDs). The electroluminescence polarization, integrated over the QD ensemble, is ∼1% for both carrier types, consistent with quantum well (QW) spin-LEDs. However, spectrally resolved measurements reveal a monotonic decrease in polarization with increasing energy for hole injection, while no spectral dependence is observed for electron injection. This is in contrast to previous measurements of QW based structures.Keywords
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