Hanle effect measurements of spin lifetimes in InAs self-assembled quantum dots
- 5 February 2001
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (6) , 733-735
- https://doi.org/10.1063/1.1344565
Abstract
Transverse spin lifetimes of spin-polarized photogenerated carriers in InAs self-assembled quantum dots are extracted from the depolarization of their photoluminescence in a magnetic field perpendicular to the spin (the Hanle effect). Hanle measurements on a series of samples reveal that the dot dimensions influence the spin lifetime and its dependence on temperature. The spin lifetime as a function of excitation intensity is qualitatively distinct for carrier spins created in the GaAs host as compared to in the InAs wetting layer.Keywords
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