Electric Field Effect on the Al-MgO-YBa2Cu3Oy Structure
- 1 January 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (1A) , L86-88
- https://doi.org/10.1143/jjap.29.l86
Abstract
The electric field effect on YBa2Cu3O y was investigated at room temperature by using the Al-MgO-(001)YBa2Cu3O y metal-insulator-superconductor (MIS) structure. Special care was taken for preparation of a good interface: heteroepitaxial growth technology was employed for MgO-YBa2Cu3O y successive growth. A typical MIS capacitance-voltage (C-V) curve was obtained under the condition of the reduced carrier concentration, suggesting that the existing band diagram could be applicable to YBa2Cu3O y as well as to semiconductors.Keywords
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