Interfacial properties of Al2O3-InP metal-insulator-semiconductor structure prepared in excess organophosphorus atmosphere

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Abstract
The effects of the excess phosphorus vapor added in the chemical vapor deposition (CVD) ambient on Al2O3‐InP metal‐insulator‐semiconductor (MIS) interfacial properties were investigated. The triethylphosphorus (TEP) was used as an excess phosphorus source gas suitable for the low temperature CVD. The change in the surface state density distribution (Nss) curves of the MIS diodes due to TEP introduction was clear: the Nss value of the broad peak at 1 eV, superimposed on the U‐shaped background, was reduced to one order of magnitude lower than that of the TEP‐free device.