Room temperature photovoltaic charging in photoemission from diamond
- 10 January 1996
- journal article
- Published by Elsevier in Surface Science
- Vol. 345 (1-2) , L23-L27
- https://doi.org/10.1016/0039-6028(95)00965-5
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Observation of a negative electron affinity for heteroepitaxial AlN on α(6H)-SiC(0001)Applied Physics Letters, 1994
- Influence of interfacial hydrogen and oxygen on the Schottky barrier height of nickel on (111) and (100) diamond surfacesPhysical Review B, 1994
- Correlation of the electrical properties of metal contacts on diamond films with the chemical nature of the metal-diamond interface. II. Titanium contacts: A carbide-forming metalPhysical Review B, 1992
- Time dependence of photovoltaic shifts in photoelectron spectroscopy of semiconductorsPhysical Review B, 1991
- Photovoltaic effects in photoemission studies of Schottky barrier formationJournal of Vacuum Science & Technology B, 1990
- Surface photovoltage effects in photoemission from metal-GaP(110) interfaces: Importance for band bending evaluationPhysical Review Letters, 1990
- Role of photocurrent in low-temperature photoemission studies of Schottky-barrier formationPhysical Review B, 1990
- The diamond surface: atomic and electronic structureSurface Science, 1986
- Schottky barriers on diamond (1 1 1)Solid State Communications, 1980
- Quantum photoyield of diamond(111)—A stable negative-affinity emitterPhysical Review B, 1979