Variable-range hopping and the hall coefficient in Si:As
- 31 October 1987
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 64 (1) , 11-14
- https://doi.org/10.1016/0038-1098(87)90509-6
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- The hopping hall mobility — A percolation approachSolid State Communications, 1981
- Hall mobility due to hopping-type conduction in disordered systemsPhilosophical Magazine Part B, 1978
- A Theory of the Hall Effect in the Hopping Region in Disordered Systems. I. Rate Equation in Presence of Electrical and Magnetic FieldsPhysica Status Solidi (b), 1977
- Conduction in glasses containing transition metal ionsJournal of Non-Crystalline Solids, 1968
- Electric Conduction in Phosphorus Doped Silicon at Low TemperaturesJournal of the Physics Society Japan, 1967
- Coefficient de Hall et résistivité du germanium dopé à l'arsenic en fonction de la températureJournal de Physique, 1967
- Compensation Dependence of Impurity Conduction in Antimony-Doped GermaniumPhysical Review B, 1965
- Hall Effect in Impurity ConductionPhysical Review B, 1961
- Electrical Properties of Germanium Semiconductors at Low TemperaturesPhysical Review B, 1955
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954