Degradation of polysilicon TFTs during dynamic stress
- 9 December 2002
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 575-578
- https://doi.org/10.1109/iedm.1991.235404
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- CMOS circuits for peripheral circuit integrated poly-Si TFT LCD fabricated at low temperature below 600 degrees CIEEE Transactions on Electron Devices, 1991
- Mechanism of device degradation in n- and p-channel polysilicon TFTs by electrical stressingIEEE Electron Device Letters, 1990
- Role of band-tail carriers in metastable defect formation and annealing in hydrogenated amorphous siliconPhysical Review B, 1990