Limitations for aggressively scaled CMOS Si devices due to bond coordination constraints and reduced band offset energies at Si-high-k dielectric interfaces
- 7 September 2000
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 166 (1-4) , 497-503
- https://doi.org/10.1016/s0169-4332(00)00482-7
Abstract
No abstract availableKeywords
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