Minimization of dangling bond defects in hydrogenated silicon nitride dielectrics for thin film transistors (TFTs)
- 1 May 1998
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 227-230, 1221-1225
- https://doi.org/10.1016/s0022-3093(98)00209-9
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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