Properties of metal-semiconductor and metal-insulator-semiconductor junctions on CdTe single crystals
- 1 May 1989
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (9) , 3552-3559
- https://doi.org/10.1063/1.342630
Abstract
Metal‐semiconductor and metal‐insulator‐semiconductor junctions, involving the thermal oxide cadmium tellurite (CdTeO3), have been fabricated on both p‐ and n‐type cadmium telluride (CdTe) single crystals. The oxide is effective in increasing the photovoltaic performance of these junctions only in the case of n‐type material. For n‐type CdTe, the oxide increases the open‐ circuit voltage over that of the Schottky barrier, whereas for p‐type CdTe the oxide decreases the open‐circuit voltage. These and several other junction properties may be understood in terms of proposed energy‐band diagrams for Cr/CdTeO3/p‐CdTe and Au/CdTeO3/n‐CdTe structuresThis publication has 16 references indexed in Scilit:
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