Current-voltage characteristics of GaAs metal-insulator-semiconductor solar cells under illumination
- 31 August 1984
- journal article
- Published by Elsevier in Solar Cells
- Vol. 12 (3) , 277-283
- https://doi.org/10.1016/0379-6787(84)90107-8
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- On the measurement of barrier height in metal-insulator-semiconductor (GaAs) structures by internal photoemission techniqueJournal of Applied Physics, 1982
- Mechanism of open-circuit voltage enhancement in metal-insulator-semiconductor GaAs solar cellsApplied Physics Letters, 1982
- Review of conductor-insulator-semiconductor (CIS) solar cellsSolar Cells, 1981
- Measurement of Richardson constant of GaAs Schottky barriersSolid-State Electronics, 1981
- New experimental evidence for minority-carrier MIS diodesApplied Physics Letters, 1979
- MIS solar cells: A reviewIEEE Transactions on Electron Devices, 1978
- Photovoltaic properties of MIS-Schottky barriersSolid-State Electronics, 1977
- MIS-Schottky theory under conditions of optical carrier generation in solar cellsApplied Physics Letters, 1976
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971