New experimental evidence for minority-carrier MIS diodes
- 15 February 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 34 (4) , 295-297
- https://doi.org/10.1063/1.90765
Abstract
Measurements of short‐circuit density Jsc and open‐circuit photovoltage Voc have been made over a range of illumination levels at various temperatures for Al‐SiOx‐pSi MIS photodiodes. It is found that at high illumination levels the data satisfy the relation Jsc=J0 exp(qVoc/kT), where J0 is a temperature‐dependent constant. By examining the variation of J0 with temperature it is conclusively demonstrated that the dark current in these diodes is dominated by minority‐carrier flow, confirming recent theoretical predictions.Keywords
This publication has 6 references indexed in Scilit:
- A minority carrier MIS solar cellSolid-State Electronics, 1977
- Intensity effects in SnO2—Si heterojunction solar cellsIEEE Transactions on Electron Devices, 1977
- Temperature dependence of current flows in nondegenerate MIS tunnel diodesJournal of Applied Physics, 1975
- Capacitance properties of MIS tunnel diodesJournal of Applied Physics, 1975
- Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—II. ExperimentSolid-State Electronics, 1974
- Minority carrier MIS tunnel diodes and their application to electron- and photo-voltaic energy conversion—I. TheorySolid-State Electronics, 1974