MIS-Schottky theory under conditions of optical carrier generation in solar cells
- 1 July 1976
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 29 (1) , 51-53
- https://doi.org/10.1063/1.88870
Abstract
The theory of MIS-Schottky barriers and their electrical characteristics is examined for its application to solar cells. It is found that the interface behavior of contacts forward-biased by illumination is qualitatively different from that of the same contacts biased in the dark by an applied forward voltage. Observed increases due to the interfacial layer in the open-circuit voltage of the solar cell cannot therefore be associated with increases in the "n value" measured for the dark current, but rather are due to the different effects of this layer on the transport properties of majority and minority carriers. The theory predicts an optimum thickness for the interfacial layer above which the short-circuit (minority-carrier) current decreases, and the efficiency (fill factor) is degraded.link_to_subscribed_fulltexKeywords
This publication has 6 references indexed in Scilit:
- Effects of interfacial oxide layers on the performance of silicon Schottky-barrier solar cellsApplied Physics Letters, 1976
- On the direct currents through interface states in metal-semiconductor contactsSolid-State Electronics, 1975
- A 15% efficient antireflection-coated metal-oxide-semiconductor solar cellApplied Physics Letters, 1975
- Potential barriers to electron tunnelling in ultra-thin films of SiO2Solid State Communications, 1974
- Comments on the conduction mechanism in Schottky diodesJournal of Physics D: Applied Physics, 1972
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971