A 15% efficient antireflection-coated metal-oxide-semiconductor solar cell
- 15 July 1975
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 27 (2) , 95-98
- https://doi.org/10.1063/1.88375
Abstract
A new effect is being developed which significantly improves the conversion efficiency of antireflection‐coated metal‐oxide‐semiconductor ‘AMOS’ solar cells. The effect, a marked increase in the open‐circuit voltage, is produced by the addition of an oxide layer to the semiconductor. Cells using gold on n‐type gallium arsenide have been made with efficiencies up to 15% in terrestrial sunlight. All processing steps are amenable to the use of low‐cost polycrystalline films of GaAs in place of the single crystals now used.Keywords
This publication has 8 references indexed in Scilit:
- The role of the interfacial layer in metal−semiconductor solar cellsJournal of Applied Physics, 1975
- Effect of chemisorbed oxygen on the Au, Cu-CdS barrier heightSolid-State Electronics, 1973
- Gallium Arsenide Surface Film Evaluation by Ellipsometry Its Effect on Schottky BarriersJournal of the Electrochemical Society, 1973
- Ga[sub 1−x]Al[sub x]As-GaAs P-P-N Heterojunction Solar CellsJournal of the Electrochemical Society, 1973
- Specific contact resistance of ohmic contacts to gallium arsenideSolid-State Electronics, 1972
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971
- Metal-semiconductor contacts for GaAs bulk effect devicesSolid-State Electronics, 1967
- The Richardson constant for thermionic emission in Schottky barrier diodesSolid-State Electronics, 1965