Transient photocurrent saturation and deep trapping in hydrogenated amorphous silicon
- 31 October 1986
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 60 (3) , 291-294
- https://doi.org/10.1016/0038-1098(86)90468-0
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Photocurrent response times in undoped amorphous hydrogenated siliconApplied Physics Letters, 1986
- Transient-photocurrent study of localized states at the conduction-band edge of a-Si: HPhilosophical Magazine Part B, 1985
- Comparative study of time-resolved conductivity measurements in hydrogenated amorphous siliconJournal of Applied Physics, 1985
- Determination of the extended-state electron mobility in a-SiPhilosophical Magazine Part B, 1985
- The long-time drift mobility in aSi:H: Optical bias and temperature dependenceJournal of Non-Crystalline Solids, 1984
- Dispersive transport and trap saturation in doped hydrogenated amorphous siliconSolid State Communications, 1984
- Study of gap states in hydrogenated amorphous silicon by transient and steady-state photoconductivity measurementsPhysical Review B, 1983
- Trapping parameters of dangling bonds in hydrogenated amorphous siliconApplied Physics Letters, 1982
- Photocurrent Transient Spectroscopy: Measurement of the Density of Localized States in -Physical Review Letters, 1981
- Evidence for Exponential Band Tails in Amorphous Silicon HydridePhysical Review Letters, 1981