Oxygen roughening of Ge(001) surfaces
- 1 January 1994
- journal article
- Published by Elsevier in Surface Science
- Vol. 320 (1-2) , 174-184
- https://doi.org/10.1016/0039-6028(94)00509-5
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Oxygen scattering and initial chemisorption probability on Ge(100)Surface Science, 1991
- Hydrogen ion beam smoothening of Ge(001)Journal of Applied Physics, 1991
- Low-energy ion beams, molecular beam epitaxy, and surface morphologyNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1989
- Limitations in low-temperature silicon epitaxy due to water vapor and oxygen in the growth ambientApplied Physics Letters, 1988
- Resuscitation of carbon-contaminated mirrors and gratings by oxygen-discharge cleaning 2: Efficiency recovery in the 100–1000-eV rangeApplied Optics, 1988
- Reflection high energy electron diffraction studies of epitaxial growth on semiconductor surfacesJournal of Vacuum Science & Technology A, 1986
- Reactive scattering of atomic oxygen from clean elemental semiconductor surfacesSurface Science, 1970
- Effect of Oxygen on the Formation of Germanium FilmsJournal of Vacuum Science and Technology, 1969
- Sticking probabilities by an effusive beam technique The germanium-oxygen systemJournal of Catalysis, 1967
- Sticking probability of oxygen molecules on single crystals of germaniumJournal of Catalysis, 1964