Transport in sub-micron resonant tunnelling devices
- 1 June 1993
- journal article
- Published by Elsevier in Physica B: Condensed Matter
- Vol. 189 (1-4) , 125-134
- https://doi.org/10.1016/0921-4526(93)90153-w
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Single-electron tunneling and Coulomb charging effects in aysmmetric double-barrier resonant-tunneling diodesPhysical Review B, 1992
- Confinement and single-electron tunneling in Schottky-gated, laterally squeezed double-barrier quantum-well heterostructuresPhysical Review Letters, 1992
- Resonant tunneling through the bound states of a single donor atom in a quantum wellPhysical Review Letters, 1992
- Delta-doping of GaAs and Al0.33Ga0.67As with Sn, Si and Be: a comparative studyJournal of Crystal Growth, 1991
- Resonant tunneling in submicron double-barrier heterostructuresApplied Physics Letters, 1991
- Direct experimental determination of the tunnelling time and transmission probability of electrons through a resonant tunnelling structureJournal of Physics: Condensed Matter, 1990
- Coulomb blockade of resonant tunnelingPhysical Review B, 1990
- Resonant tunneling through one- and zero-dimensional states constricted by As/GaAs/As heterojunctions and high-resistance regions induced by focused Ga ion-beam implanationPhysical Review B, 1990
- Observation of discrete electronic states in a zero-dimensional semiconductor nanostructurePhysical Review Letters, 1988
- Resonant tunneling in semiconductor double barriersApplied Physics Letters, 1974