Iron-Related Donor Level in N-Type Silicon

Publisher Website
Google Scholar
Abstract
Iron introduces a donor level at about E c-0.4 eV in n-type silicon. In this work, the electrical properties of this donor state have been studied by deep-level transient spectroscopy (DLTS). It is found, by resolving the overlapping DLTS peaks obtained after room temperature annealing, that the donor decomposes into several other states. Isothermal annealing of samples containing different amounts of phosphorus show that phosphorus has no significant effect on the annealing decay constant of the donor, indicating that phosphorus atoms do not take part in the annealing decay of the donor. A Poole-Frenkel field emission effect is observed in the donor level as expected for donors in n-type silicon.

This publication has 5 references indexed in Scilit: