Hydride Vapor Phase Epitaxy of InxGa1-xN Thin Films
- 1 July 1997
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 36 (7R)
- https://doi.org/10.1143/jjap.36.4295
Abstract
In this paper, we investigate the growth of In x Ga1- x N thin films using the hydride vapor phase epitaxy (HVPE) method. Indium is hardly contained in films grown at higher growth temperatures, and phase separation tendencies between InN and GaN are observed in some grown films. In their photoluminescence spectra measured at room temperature, two peaks are observed at 370 nm and 430–440 nm.Keywords
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