Dielectric breakdown mechanism of thin-SiO/sub 2/ studied by the post-breakdown resistance statistics
- 1 April 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 47 (4) , 741-745
- https://doi.org/10.1109/16.830988
Abstract
No abstract availableKeywords
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