A consistent model for the thickness dependence of intrinsic breakdown in ultra-thin oxides
Top Cited Papers
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 863-866
- https://doi.org/10.1109/iedm.1995.499353
Abstract
A consistent model for the intrinsic time dependent dielectric breakdown (TDDB) of thin oxides is introduced. This model links the existing anode hole injection and the electron trap generation models together and describes wearout as a hole induced generation of electron traps. Breakdown is defined as conduction via these traps from one interface to the other. Implementing the model in a simulator, the oxide thickness dependence of the Weibull slope of the Q/sub BD/-distribution is predicted, and, using the unique relationship between hole fluence and generated electron trap density, the decrease of the critical hole fluence with oxide thickness is explained.Keywords
This publication has 6 references indexed in Scilit:
- Oxide and interface degradation and breakdown under medium and high field injection conditions: A correlation studyMicroelectronic Engineering, 1995
- Hole injection SiO/sub 2/ breakdown model for very low voltage lifetime extrapolationIEEE Transactions on Electron Devices, 1994
- On the breakdown statistics of very thin SiO2 filmsThin Solid Films, 1990
- Modeling and characterization of gate oxide reliabilityIEEE Transactions on Electron Devices, 1988
- Modeling of charge-injection effects in metal-oxide-semiconductor structuresJournal of Applied Physics, 1988
- Substrate hole current and oxide breakdownApplied Physics Letters, 1986