Oxide and interface degradation and breakdown under medium and high field injection conditions: A correlation study
- 1 June 1995
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 28 (1-4) , 313-316
- https://doi.org/10.1016/0167-9317(95)00065-g
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Correlation of trap generation to charge-to-breakdown (Q/sub bd/): a physical-damage model of dielectric breakdownIEEE Transactions on Electron Devices, 1994
- Direct and post-injection oxide and interface trap generation resulting from low-temperature hot-electron injectionJournal of Applied Physics, 1993
- A model for silicon-oxide breakdown under high field and current stressJournal of Applied Physics, 1988
- Trap generation and occupation dynamics in SiO2 under charge injection stressJournal of Applied Physics, 1986