On the breakdown statistics of very thin SiO2 films
- 1 March 1990
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 185 (2) , 347-362
- https://doi.org/10.1016/0040-6090(90)90098-x
Abstract
No abstract availableKeywords
This publication has 34 references indexed in Scilit:
- Modeling and characterization of gate oxide reliabilityIEEE Transactions on Electron Devices, 1988
- The effect of hydrogen on trap generation, positive charge trapping, and time-dependent dielectric breakdown of gate oxidesIEEE Electron Device Letters, 1988
- Fundamental differences between thick and thin oxides subjected to high electric fieldsJournal of Applied Physics, 1987
- The nature of charge trapping responsible for thin-oxide breakdown under a dynamic field stressIEEE Electron Device Letters, 1987
- Charge trapping and breakdown in thin SiO2 polysilicon-gate MOS capacitorsApplied Surface Science, 1987
- Hot electrons in silicon dioxide: Ballistic to steady-state transportApplied Surface Science, 1987
- SiO2-induced substrate current and its relation to positive charge in field-effect transistorsJournal of Applied Physics, 1986
- Dynamic model of trapping-detrapping in SiO2Journal of Applied Physics, 1985
- Electrical breakdown in thin gate and tunneling oxidesIEEE Transactions on Electron Devices, 1985
- Electrical breakdown mechanisms in thin insulatorsThin Solid Films, 1978