Charge trapping and breakdown in thin SiO2 polysilicon-gate MOS capacitors
- 1 October 1987
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 30 (1-4) , 333-338
- https://doi.org/10.1016/0169-4332(87)90110-3
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- MOSFET degradation due to stressing of thin oxideIEEE Transactions on Electron Devices, 1984
- Electron trapping/detrapping within thin SiO2 films in the high field tunneling regimeJournal of Applied Physics, 1983
- Microscopic location of electron traps induced by arsenic implantation in silicon dioxideJournal of Applied Physics, 1983
- Dielectric breakdown in electrically stressed thin films of thermal SiO2Journal of Applied Physics, 1978