Fundamental differences between thick and thin oxides subjected to high electric fields
- 15 November 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (10) , 4305-4308
- https://doi.org/10.1063/1.339110
Abstract
We observe atomic scale differences in the response of thin and thick oxides subjected to high electric fields. In stressed thick oxides, we observe the generation of a ‘‘trivalent silicon’’ trapped hole center, termed E′; in stressed thin oxides no E′ centers were detected. We believe that our results indicate the absence of impact ionization in stressed thin oxides.This publication has 12 references indexed in Scilit:
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