Study of Silicon-Silicon Dioxide Structure by Electron Spin Resonance II

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Abstract
Effects of the paramagnetic center observed at Si-SiO2 interface on the surface electron transport in MOSFET and MOS Hall devices are investigated. It is concluded that (1) surface mobility of electrons in the triode region decreases with decreasing partial pressure of water in oxygen for gate oxidation, which corresponds to increase in the density of the paramagnetic center. (2) when the density of the paramagnetic center is in the order of 1013cm-2, some amounts of the induced electrons at the surface seem to be captured by the traps which are associated with the center. (3) the surface mobility in the triode region can be explained by the Coulomb scattering due to the ionized center, the density of which is proportional to the density of the paramagmetic center.