Influence of Doping on the Structural Properties of Micro-Crystalline Silicon Prepared with the VHF-GD Technique at Low Deposition Temperatures.
- 1 January 1991
- journal article
- Published by Springer Nature in MRS Proceedings
- Vol. 219, 383
- https://doi.org/10.1557/proc-219-383
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Hydrogen effusion: a probe for surface desorption and diffusionPhysica B: Condensed Matter, 1991
- Hydrogen diffusion in aSi:HSolid State Communications, 1990
- Fermi energy dependence of surface desorption and diffusion of hydrogen in a-Si:HJournal of Non-Crystalline Solids, 1989
- Preparation and Characterization of Highly Conductive (100 S/cm) Phosphorus Doped νc-Si:H Films Deposited Using the VHF-GD TechniqueMRS Proceedings, 1989
- Hydrogen Passivation of Doped and Undoped Microcrystalline SiliconMRS Proceedings, 1989
- A New Technique of Boron Doping in Si:H FilmsJapanese Journal of Applied Physics, 1981
- Optical determination of mobility and carrier concentration in heavily doped polycrystalline siliconJournal of Applied Physics, 1980
- Determination of Optical Constants and Carrier Effective Mass of SemiconductorsPhysical Review B, 1957