Properties of Al2O3 and SiO2 surface layers on InSb, investigated by backscattering techniques
- 1 May 1973
- journal article
- research article
- Published by Elsevier in Thin Solid Films
- Vol. 16 (2) , S11-S12
- https://doi.org/10.1016/0040-6090(73)90176-4
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- A universal goniometer for channeling experimentsNuclear Instruments and Methods, 1972
- SURFACE INVERSION AND ACCUMULATION OF ANODIZED InSbApplied Physics Letters, 1965
- Indium antimonide—A review of its preparation, properties and device applicationsSolid-State Electronics, 1962