A universal goniometer for channeling experiments
- 15 February 1972
- journal article
- Published by Elsevier in Nuclear Instruments and Methods
- Vol. 99 (1) , 121-124
- https://doi.org/10.1016/0029-554x(72)90142-5
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Surface preparation of single crystal n-type GaAs substrates studied by the channeling techniquePhysica Status Solidi (a), 1971
- ANALYSIS OF SILICON NITRIDE LAYERS ON SILICON BY BACKSCATTERING AND CHANNELING EFFECT MEASUREMENTSApplied Physics Letters, 1970
- CHANNELING STUDY OF BORON-IMPLANTED SILICONApplied Physics Letters, 1970
- Defect studies in crystals by means of channelingCanadian Journal of Physics, 1968
- Ion implantation of silicon and germanium at room temperature. Analysis by means of 1.0-MeV helium ion scatteringCanadian Journal of Physics, 1968
- ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERINGCanadian Journal of Physics, 1967