Atomic-layer etching of Ge using an ultraclean ECR plasma
- 1 March 1997
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 112, 187-190
- https://doi.org/10.1016/s0169-4332(96)01026-4
Abstract
No abstract availableKeywords
Funding Information
- Tokuyama Science Foundation
- Ministry of Education, Culture, Sports, Science and Technology
- Ogasawara Foundation for the Promotion of Science and Engineering
This publication has 6 references indexed in Scilit:
- Substrate orientation dependence of self-limited atomic-layer etching of Si with chlorine adsorption and low-energy Ar+ irradiationApplied Surface Science, 1994
- Self-limited layer-by-layer etching of Si by alternated chlorine adsorption and Ar+ ion irradiationApplied Physics Letters, 1993
- Electron-cyclotron-resonance plasma-enhanced chemical vapor deposition of epitaxial Si without substrate heating by ultraclean processingApplied Physics Letters, 1991
- Directional etching of Si with perfect selectivity to SiO2 using an ultraclean electron cyclotron resonance plasmaApplied Physics Letters, 1990
- Selective germanium epitaxial growth on silicon using CVD technology with ultra-pure gasesJournal of Crystal Growth, 1990
- The Roles of Ions and Neutral Active Species in Microwave Plasma EtchingJournal of the Electrochemical Society, 1979