Technical aspects of InGaAs MOMBE — shutter action, system drift, and material quality
- 2 March 1991
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 110 (3) , 452-456
- https://doi.org/10.1016/0022-0248(91)90282-a
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- InGaAs MOMBE — system drift and material qualityJournal of Crystal Growth, 1991
- Incorporation of group III and group V elements in chemical beam epitaxy of GaInAsP alloysJournal of Crystal Growth, 1991
- A comparative study of Ga(CH3)3, Ga(C2H5)3 and Ga(C4H9)3 in the low pressure MOCVD of GaAsJournal of Crystal Growth, 1988
- Instrumental aspects of atmospheric pressure MOVPE growth of InP and InP: GaInAsP heterostructuresJournal of Crystal Growth, 1986
- A critical appraisal of growth mechanisms in MOVPEJournal of Crystal Growth, 1984