Steady-state photoconductivity in glow-discharged amorphous hydrogenated silicon
- 1 July 1985
- journal article
- Published by Elsevier in Journal of Non-Crystalline Solids
- Vol. 72 (2-3) , 199-210
- https://doi.org/10.1016/0022-3093(85)90177-2
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Effect of Substrate Temperature on Properties of Glow-Discharged Hydrogenated Amorphous SiliconJapanese Journal of Applied Physics, 1984
- Substrate Temperature Dependence of Electron Drift Mobility in Glow-Discharged Hydrogenated Amorphous SiliconJapanese Journal of Applied Physics, 1984
- Time-of-Flight Measurement of Undoped Glow-Discharged a-Si:HJapanese Journal of Applied Physics, 1983
- A Photoluminescence Study of Amorphous-Microcrystalline Mixed-Phase Si:H FilmsJapanese Journal of Applied Physics, 1981
- Photoconductivity, trapping, and recombination in discharge-produced, hydrogenated amorphous siliconPhysical Review B, 1981
- Derivation of the low-energy optical-absorption spectra of-Si: H from photoconductivityPhysical Review B, 1980
- Device physics and design of a-Si ITO/p-i-n heteroface solar cellsSolar Energy Materials, 1980
- Photoconductivity and recombination in doped amorphous siliconPhilosophical Magazine, 1977
- The temperature dependence f photoconductivity in a-SiJournal of Non-Crystalline Solids, 1974
- Analysis of Photoconductivity in Amorphous ChalcogenidesJournal of Applied Physics, 1972