Optical gain in GaAs doping superlattices
- 1 July 1983
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 43 (1) , 40-42
- https://doi.org/10.1063/1.94161
Abstract
The first optical gain measurements have been performed on GaAs doping superlattices grown by molecular beam epitaxy. A maximum gain of 300 cm−1 is obtained in the layered material at a photon energy of 1.35 eV using an excitation density of only 20 W cm−2. Due to the unique tunable energy gap of doping superlattices, the stimulated emission occurs at photon energies far below the gap of bulk GaAs and can be shifted by appropriate choice of the excitation density. Thus, a strong shift of the energetic position of the gain spectra to 1.40 eV with an increased gain of 400 cm−1 is observed when the excitation density is increased to 500 W cm−2.Keywords
This publication has 7 references indexed in Scilit:
- Electronic structure of semiconductors with doping superlatticesPhysical Review B, 1983
- Tunable electroluminescence from GaAs doping superlatticesApplied Physics Letters, 1982
- Photoluminescence study of electron-hole recombination across the tunable effective gap in GaAs n-i-p-i superlatticesSolid State Communications, 1982
- Observation of Tunable Band Gap and Two-Dimensional Subbands in a Novel GaAs SuperlatticePhysical Review Letters, 1981
- The Use of Si and Be Impurities for Novel Periodic Doping Structures in GaAs Grown by Molecular Beam EpitaxyJournal of the Electrochemical Society, 1981
- Investigations on unsaturated optical gain spectra of GaAs-GaAlAs-DHS lasers at above-threshold conditionsApplied Physics A, 1978
- Electron States in Crystals with “nipi‐Superstructure”Physica Status Solidi (b), 1972