Electronic structure of semiconductors with doping superlattices

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Abstract
The dynamically two-dimensional electronic subband structure and the effective energy gap are tunable quantities in semiconductors with a doping superlattice. We present self-consistent calculations of the electronic states, in the framework of the local-density approximation, as a function of the charge-carrier concentration. A discussion of several superlattices differing in their design parameters exemplifies the wide range of electronic subband structures which may be realized in this type of system.

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