Electronic excitations in semiconductors with doping superlattices
- 15 March 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 27 (6) , 3547-3553
- https://doi.org/10.1103/physrevb.27.3547
Abstract
Electron-hole excitation energies in the subband structure of semiconductors with doping superlattices are obtained from a discussion of the Bethe-Salpeter equation in a local representation. For two examples representing different subband structures due to different design parameters of the superlattice we present numerical results for intersubband excitations (spin-flip and non-spin-flip) with the wave vector along the superlattice axis. We include in the interaction term of the Bethe-Salpeter equation the electron-hole attraction and its associated exchange counterpart which corresponds to the resonant screening.Keywords
This publication has 19 references indexed in Scilit:
- Electronic structure of semiconductors with doping superlatticesPhysical Review B, 1983
- Electronic properties of two-dimensional systemsReviews of Modern Physics, 1982
- Observation of intersubband excitations in a multilayer two dimensional electron gasSolid State Communications, 1979
- Inelastic Light Scattering from a Quasi-Two-Dimensional Electron System in GaAs-HeterojunctionsPhysical Review Letters, 1979
- Inter-subband optical absorption in space-charge layers on semiconductor surfacesZeitschrift für Physik B Condensed Matter, 1977
- Many-body effects in-type Si inversion layers. II. Excitations to higher subbandsPhysical Review B, 1977
- On the absorption of infrared radiation by electrons in semiconductor inversion layersSolid State Communications, 1976
- Spectroscopy of surface space charge layersSurface Science, 1976
- Self-Consistent Equations Including Exchange and Correlation EffectsPhysical Review B, 1965
- Inhomogeneous Electron GasPhysical Review B, 1964