Oxidation mechanism of III–V semiconductors
- 1 January 1990
- Vol. 41 (1-3) , 667-668
- https://doi.org/10.1016/s0042-207x(05)80156-3
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
- On the growth mode of oxide films on cleaved GaAs(110) surfaces at room temperatureSolid State Communications, 1986
- Adsorption of germanium and of oxygen on cleaved InP(110) surfaces: Auger electron spectroscopy and measurements of work function and of surface photovoltageJournal of Vacuum Science & Technology B, 1985
- Optically enhanced low temperature oxygen chemisorption on GaAs(110)Journal of Vacuum Science & Technology A, 1985
- Oxidation of GaAs(110): New results and modelsPhysical Review B, 1984
- Chemisorption of oxygen at cleaved GaAs(110) surfaces: Photon stimulation and chemisorption statesSurface Science, 1984
- The oxidation of GaAs(110): A reevaluationJournal of Vacuum Science & Technology B, 1984
- Oxygen and hydrogen adsorption on GaAs(110)Journal of Vacuum Science & Technology B, 1983
- Photoemission studies of the interaction of oxygen with GaAs(110)Physical Review B, 1982
- Photoemission studies of the initial stages of oxidation of GaSb and InPSurface Science, 1979
- Chemisorption and oxidation studies of the (110) surfaces of GaAs, GaSb, and InPPhysical Review B, 1978